SQJ488 Series

Catalog

MOSFET N-CH 100V 42A PPAK SO-8

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Grade	Vgs (Max)	Qualification	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Vishay General Semiconductor - Diodes Division SQJ488EP-T1_BE3	978 pF	27 nC	2.5 V	N-Channel	21 mOhm	42 A	Surface Mount	100 V	MOSFET (Metal Oxide)	Automotive	20 V	AEC-Q101	PowerPAK® SO-8	83 W	-55 °C	175 ░C	4.5 V 10 V	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SQJ488EP-T2_BE3	978 pF	27 nC	2.5 V	N-Channel	21 mOhm	42 A	Surface Mount	100 V	MOSFET (Metal Oxide)	Automotive	20 V	AEC-Q101	PowerPAK® SO-8	83 W	-55 °C	175 ░C	4.5 V 10 V	PowerPAK® SO-8