Specification	FDMS8018

Current - Continuous Drain (Id) @ 25°C	120 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	5235 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	83 W, 2.5 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS8018 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 30V, 175A, 1.8mΩ

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Technology	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMS8018	3 V	-55 °C	150 °C	2.5 W 83 W	N-Channel	MOSFET (Metal Oxide)	8-PowerTDFN	8-PQFN (5x6)	4.5 V 10 V	61 nC	Surface Mount	30 A 120 A	5235 pF	30 V	20 V	1.8 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.44
		10	$ 1.57
		100	$ 1.08
		500	$ 0.86
		1000	$ 0.79
	Digi-Reel®	1	$ 2.44
		10	$ 1.57
		100	$ 1.08
		500	$ 0.86
		1000	$ 0.79
	Tape & Reel (TR)	3000	$ 0.71
Newark	Each (Supplied on Cut Tape)	1	$ 2.34
		10	$ 1.82
		25	$ 1.69
		50	$ 1.57
		100	$ 1.45
		250	$ 1.45
ON Semiconductor	N/A	1	$ 0.47

Description

General part information

FDMS8018 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.