Specification	APT80GA90B

Current - Collector (Ic) (Max) [Max]	145 A
Current - Collector Pulsed (Icm)	239 A
Gate Charge	200 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	625 W
Supplier Device Package	TO-247 [B]
Switching Energy	1389 µJ, 1652 µJ
Test Condition	47 A, 15 V, 600 V, 4.7 Ohm
Vce(on) (Max) @ Vge, Ic	3.1 V
Voltage - Collector Emitter Breakdown (Max)	900 V

IGBT-PT-900V Series

900V Punch-Thru IGBT

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Mounting Type	Switching Energy	Current - Collector (Ic) (Max) [Max]	Gate Charge	Td (on/off) @ 25°C	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Input	Configuration	Input Capacitance (Cies) @ Vce	Current - Collector Cutoff (Max) [Max]	Reverse Recovery Time (trr)
Microchip Technology APT40GP90BG	TO-247 [B]	-55 °C	150 °C	PT	3.9 V	5 Ohm 15 V 40 A 600 V	Through Hole	825 µJ	100 A	145 nC	16 ns 75 ns	543 W	900 V	TO-247-3
Microchip Technology APT80GA90B	TO-247 [B]	-55 °C	150 °C	PT	3.1 V	4.7 Ohm 15 V 47 A 600 V	Through Hole	1389 µJ 1652 µJ	145 A	200 nC		625 W	900 V	TO-247-3	239 A
Microchip Technology APT15GP90BDQ1G	TO-247 [B]	-55 °C	150 °C	PT	3.9 V	4.3 Ohm 15 A 15 V 600 V	Through Hole	200 µJ	43 A	60 nC	9 ns 33 ns	250 W	900 V	TO-247-3	60 A
Microchip Technology APT43GA90BD30	TO-247 [B]	-55 °C	150 °C	PT	3.1 V	4.7 Ohm 15 V 25 A 600 V	Through Hole	425 µJ 875 µJ	78 A	116 nC		337 W	900 V	TO-247-3		82 ns	12 ns
Microchip Technology APT25GP90BG	TO-247 [B]	-55 °C	150 °C	PT	3.9 V	5 Ohm 15 V 25 A 600 V	Through Hole	370 µJ	72 A	110 nC		417 W	900 V	TO-247-3	110 A	55 ns	13 ns
Microchip Technology APT64GA90B2D30		-55 °C	150 °C	PT	3.1 V	4.7 Ohm 15 V 38 A 600 V	Through Hole	1088 µJ 1192 µJ	117 A	162 nC		500 W	900 V	TO-247-3 Variant	193 A	131 ns	18 ns
Microchip Technology APT27GA90BD15	TO-247 [B]	-55 °C	150 °C	PT	3.1 V	10 Ohm 14 A 15 V 600 V	Through Hole	287 µJ 413 µJ		62 nC	9 ns 98 ns	223 W	900 V	TO-247-3	79 A
Microchip Technology APT40GP90JDQ2	ISOTOP®	-55 °C	150 °C	PT	3.9 V		Chassis Mount		64 A			284 W	900 V	ISOTOP				Standard	Single	3.3 nF	350 µA
Microchip Technology APT43GA90B	TO-247 [B]	-55 °C	150 °C	PT	3.1 V	4.7 Ohm 15 V 25 A 600 V	Through Hole	425 µJ 875 µJ	78 A	116 nC		337 W	900 V	TO-247-3		82 ns	12 ns
Microchip Technology APT80GA90LD40	TO-264			PT	3.1 V	4.7 Ohm 15 V 47 A 600 V	Through Hole	1389 µJ 1652 µJ	145 A	200 nC		625 W	900 V	TO-264-3 TO-264AA	239 A							25 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.89
		100	$ 8.84
Microchip Direct	TUBE	1	$ 10.89
		100	$ 9.40
		250	$ 9.05
		500	$ 8.84
		1000	$ 8.62
		5000	$ 8.35

Description

General part information

IGBT-PT-900V Series

IGBT products from Microchip provide high-quality solutions for a

wide range of high-voltage and high-power applications. The switching frequency

range spans from DC for minimal conduction loss to 150 kHz for

Documents

Technical documentation and resources

Datasheet

APT80GA90B

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APT80GA90B

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Technical Specifications

IGBT-PT-900V Series

Pricing

Description

IGBT-PT-900V Series

Documents

Datasheet

High-Voltage Power Discretes and Modules

APT35GA90BD15, APT35GA90SD15 IGBT PT MOS 8 Combi 900 V 35 A TO-247 Datasheet

APT27GA90BD15, APT27GA90SD15 IGBT PT MOS 8 Combi 900 V 27 A TO-247 Datasheet

APT35GA90B, APT35GA90S IGBT PT MOS 8 Single 900 V 35 A TO-247 Datasheet

APT15GP90BDQ1G IGBT PT MOS 7 Combi 900 V 15 A TO-247 Datasheet

APT25GP90B IGBT PT MOS 7 Single 900 V 25 A TO-247 Datasheet

APT25GP90BDQ1G 900 V, 25 A Power MOS 7™ PT IGBT with DQ Diode TO-247 Datasheet

IGBT-PT-900V Series