STFW1N105K3
NRNDN-CHANNEL 1050 V, 8 OHM TYP., 1.4 A SUPERMESH3(TM) POWER MOSFET IN TO-3PF PACKAGE
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STFW1N105K3
NRNDN-CHANNEL 1050 V, 8 OHM TYP., 1.4 A SUPERMESH3(TM) POWER MOSFET IN TO-3PF PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STFW1N105K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.4 A |
| Drain to Source Voltage (Vdss) | 1050 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 11 Ohm |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.89 | |
Description
General part information
STFW1N105K3 Series
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Documents
Technical documentation and resources