Discrete Semiconductor Products

SIHG21N60EF-GE3

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MOSFET N-CH 600V 21A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 600V 21A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG21N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	2030 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	176 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHG21N60EF-GE3	21 A	176 mOhm	-55 °C	150 °C	2030 pF	84 nC	TO-247AC	600 V	N-Channel	227 W	Through Hole	10 V	TO-247-3	30 V	MOSFET (Metal Oxide)	4 V

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General part information

N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-247AC

Technical documentation and resources