SIHG21 Series

Catalog

MOSFET N-CH 600V 21A TO247AC

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHG21N60EF-GE3	21 A	176 mOhm	-55 °C	150 °C	2030 pF	84 nC	TO-247AC	600 V	N-Channel	227 W	Through Hole	10 V	TO-247-3	30 V	MOSFET (Metal Oxide)	4 V