Discrete Semiconductor Products
STGD10NC60KDT4
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 20A 3-PIN(2+TAB) DPAK T/R
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Discrete Semiconductor Products
STGD10NC60KDT4
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 20A 3-PIN(2+TAB) DPAK T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGD10NC60KDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 19 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 62 W |
| Reverse Recovery Time (trr) | 22 ns |
| Supplier Device Package | DPAK |
| Switching Energy | 55 µJ, 85 µJ |
| Td (on/off) @ 25°C | 72 ns, 17 ns |
| Test Condition | 10 Ohm, 15 V, 390 V, 5 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3953 | $ 2.17 | |
Description
General part information
STGD10NC60KDT4 Series
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.