Discrete Semiconductor Products
STP270N8F7
ActiveSTMicroelectronics
N-CHANNEL 80 V, 2.1 MOHM TYP., 180 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP270N8F7
ActiveSTMicroelectronics
N-CHANNEL 80 V, 2.1 MOHM TYP., 180 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP270N8F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 193 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 315 W |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 200 | $ 5.13 | |
| Tube | 1 | $ 5.17 | ||
| 10 | $ 3.46 | |||
| 100 | $ 2.50 | |||
| 500 | $ 2.36 | |||
Description
General part information
STP270 Series
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources