JANKCB2N5002
ActiveRH POWER BJT DIE ROHS COMPLIANT: YES
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JANKCB2N5002
ActiveRH POWER BJT DIE ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JANKCB2N5002 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Grade | Military |
| Mounting Type | Stud Mount |
| Package / Case | Die |
| Power - Max [Max] | 2 W |
| Qualification | MIL-PRF-19500/534 |
| Supplier Device Package | Die |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 345.64 | |
| Microchip Direct | N/A | 1 | $ 372.23 | |
| Newark | Each | 100 | $ 345.64 | |
| 500 | $ 332.34 | |||
Description
General part information
JANKCB2N5002-Transistor-Die Series
This specification covers the performance requirements for NPN, silicon, power, 2N5002 and 2N5004 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/534. Two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die.
Documents
Technical documentation and resources