Specification	NVMYS014N06CLTWG

Current - Continuous Drain (Id) @ 25°C	36 A, 12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.8 W, 37 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NVMYS014N06CL Series

Power MOSFET 60 V, 14.5mΩ, 42 A, Single N-Channel

Part	Rds On (Max) @ Id, Vgs [Max]	Qualification	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Package / Case	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Grade	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NVMYS014N06CLTWG	15 mOhm	AEC-Q101	Surface Mount	60 V	5	LFPAK4	6	SOT-1023 4-LFPAK	MOSFET (Metal Oxide)	2 V	-55 °C	175 ░C	3.8 W 37 W	N-Channel	20 V	12 A 36 A	620 pF	4.5 V 10 V	Automotive	9.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.42
		10	$ 0.90
		100	$ 0.60
		500	$ 0.47
		1000	$ 0.42
	Digi-Reel®	1	$ 1.42
		10	$ 0.90
		100	$ 0.60
		500	$ 0.47
		1000	$ 0.42
	Tape & Reel (TR)	3000	$ 0.37
		6000	$ 0.35
		9000	$ 0.34
ON Semiconductor	N/A	1	$ 0.31

Description

General part information

NVMYS014N06CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.