Catalog
Power MOSFET 60 V, 14.5mΩ, 42 A, Single N-Channel
| Part | Rds On (Max) @ Id, Vgs [Max] | Qualification | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Package / Case | Technology | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Grade | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 15 mOhm | AEC-Q101 | Surface Mount | 60 V | 5 | LFPAK4 | 6 | SOT-1023 4-LFPAK | MOSFET (Metal Oxide) | 2 V | -55 °C | 175 ░C | 3.8 W 37 W | N-Channel | 20 V | 12 A 36 A | 620 pF | 4.5 V 10 V | Automotive | 9.7 nC |
Key Features
• Small Footprint (5x6 mm)
• Low RDS (ON)
• Low QGand Capacitance
• LFPAK4 Package, Industry Standard
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Description
AI
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.