Specification	KSD1616AYTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	750 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

KSD1616A Series

NPN Epitaxial Silicon Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor KSD1616AYTA	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	135 hFE	NPN	150 °C	TO-92-3	Through Hole	60 V
ON Semiconductor KSD1616AGTA	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	200	NPN	150 °C	TO-92-3	Through Hole	60 V
ON Semiconductor KSD1616YTA	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	135 hFE	NPN	150 °C	TO-92-3	Through Hole		50 V
ON Semiconductor KSD1616GBU	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	200	NPN	150 °C	TO-92-3	Through Hole		50 V
ON Semiconductor KSD1616ALTA	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	300	NPN	150 °C	TO-92-3	Through Hole	60 V
ON Semiconductor KSD1616GBU	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	200	NPN	150 °C	TO-92-3	Through Hole		50 V
ON Semiconductor KSD1616AGTA	300 mV	750 mW	100 nA	TO-226-3 TO-92-3	1 A	200	NPN	150 °C	TO-92-3	Through Hole	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources