Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Audio Frequency Power Amplifier and Medium Speed Switching
• Complement to KSB116 / KSB1116A
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Operating Temperature | Supplier Device Package | Mounting Type | Voltage - Collector Emitter Breakdown (Max) | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 135 hFE | NPN | 150 °C | TO-92-3 | Through Hole | 60 V | |
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 200 | NPN | 150 °C | TO-92-3 | Through Hole | 60 V | |
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 135 hFE | NPN | 150 °C | TO-92-3 | Through Hole | 50 V | |
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 200 | NPN | 150 °C | TO-92-3 | Through Hole | 50 V | |
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 300 | NPN | 150 °C | TO-92-3 | Through Hole | 60 V | |
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 200 | NPN | 150 °C | TO-92-3 | Through Hole | 50 V | |
ON Semiconductor | 300 mV | 750 mW | 100 nA | TO-226-3 TO-92-3 | 1 A | 200 | NPN | 150 °C | TO-92-3 | Through Hole | 60 V |