Discrete Semiconductor Products

APT36GA60B

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IGBT PT 600V 65A TO247

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Discrete Semiconductor Products

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IGBT PT 600V 65A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT36GA60B

Current - Collector (Ic) (Max) [Max]	65 A
Current - Collector Pulsed (Icm)	109 A
Gate Charge	102 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	290 W
Supplier Device Package	TO-247 [B]
Switching Energy	254 µJ, 307 µJ
Td (on/off) @ 25°C	16 ns
Td (on/off) @ 25°C	122 ns
Test Condition	20 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Test Condition	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Package / Case	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Mounting Type	Switching Energy	IGBT Type	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)
Microchip Technology APT36GA60B	TO-247 [B]	10 Ohm 15 V 20 A 400 V	290 W	-55 °C	150 °C	102 nC	TO-247-3	16 ns	122 ns	Through Hole	254 µJ 307 µJ	PT	2.5 V	65 A	109 A	600 V
Microchip Technology APT36GA60SD15	D3PAK	10 Ohm 15 V 20 A 400 V	290 W	-55 °C	150 °C	102 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	16 ns	122 ns	Surface Mount	254 µJ 307 µJ	PT	2.5 V	65 A	109 A	600 V	19 ns
Microchip Technology APT36GA60BD15	TO-247 [B]	10 Ohm 15 V 20 A 400 V	290 W	-55 °C	150 °C	18 nC	TO-247-3	16 ns	122 ns	Through Hole	254 µJ 307 µJ	PT	2.5 V	65 A	109 A	600 V

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General part information

IGBT PT 600 V 65 A 290 W Through Hole TO-247 [B]

Technical documentation and resources