Discrete Semiconductor Products

SI2336DS-T1-BE3

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MOSFET N-CH 30V 4.3A/5.2A SOT23

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Discrete Semiconductor Products

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MOSFET N-CH 30V 4.3A/5.2A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI2336DS-T1-BE3

Current - Continuous Drain (Id) @ 25°C	5.2 A, 4.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.8 W, 1.25 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI2336DS-T1-BE3	MOSFET (Metal Oxide)	Surface Mount	30 V	15 nC	42 mOhm	1 V	8 V	-55 °C	150 °C	560 pF	SOT-23-3 (TO-236)	1.25 W 1.8 W	SC-59 SOT-23-3 TO-236-3	N-Channel	1.8 V 4.5 V	4.3 A 5.2 A

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General part information

N-Channel 30 V 4.3A (Ta), 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources