SI2336 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 4.3A/5.2A SOT23
| Part | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power Dissipation (Max) | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Surface Mount | 30 V | 15 nC | 42 mOhm | 1 V | 8 V | -55 °C | 150 °C | 560 pF | SOT-23-3 (TO-236) | 1.25 W 1.8 W | SC-59 SOT-23-3 TO-236-3 | N-Channel | 1.8 V 4.5 V | 4.3 A 5.2 A |