Discrete Semiconductor Products

VS-E5TX3012-M3

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DIODE GEN PURP 1.2KV 30A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 30A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-E5TX3012-M3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-E5TX3012-N3	175 ░C	-55 C	30 A	Standard	50 µA	3.15 V	TO-220-2	Through Hole	200 mA 500 ns	1.2 kV	TO-220AC
Vishay General Semiconductor - Diodes Division VS-E5TX3012-M3	175 ░C	-55 C	30 A	Standard	50 µA	3.3 V	TO-220-2	Through Hole	200 mA 500 ns	1.2 kV	TO-220AC

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General part information

Diode 1200 V 30A Through Hole TO-220AC

Technical documentation and resources