Discrete Semiconductor Products

VS-E5TX3012-N3

Obsolete

DIODE GEN PURP 1.2KV 30A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.2KV 30A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-E5TX3012-N3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.15 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-E5TX3012-N3	175 ░C	-55 C	30 A	Standard	50 µA	3.15 V	TO-220-2	Through Hole	200 mA 500 ns	1.2 kV	TO-220AC
Vishay General Semiconductor - Diodes Division VS-E5TX3012-M3	175 ░C	-55 C	30 A	Standard	50 µA	3.3 V	TO-220-2	Through Hole	200 mA 500 ns	1.2 kV	TO-220AC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 30A Through Hole TO-220AC

Technical documentation and resources

No documents available