Discrete Semiconductor Products

SIHF840LCS-GE3

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MOSFET N-CH 500V 8A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 500V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF840LCS-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 125 W
Rds On (Max) @ Id, Vgs [Max]	850 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIHF840LCS-GE3	N-Channel	MOSFET (Metal Oxide)	4 V	TO-263 (D2PAK)	3.1 W 125 W	850 mOhm	30 V	39 nC	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	500 V	1100 pF	8 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources