SIHF840 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 8A D2PAK
| Part | FET Type | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | MOSFET (Metal Oxide) | 4 V | TO-263 (D2PAK) | 3.1 W 125 W | 850 mOhm | 30 V | 39 nC | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 500 V | 1100 pF | 8 A | -55 °C | 150 °C |