Discrete Semiconductor Products
YQ60NL10CDTL
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 60A, LPDL, HIGHLY EFFICIENT SBD
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Discrete Semiconductor Products
YQ60NL10CDTL
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 60A, LPDL, HIGHLY EFFICIENT SBD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | YQ60NL10CDTL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 60 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-263L |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 770 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 4.23 | |
Description
General part information
YQ60NL10CD Series
The YQ60NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Documents
Technical documentation and resources