YQ60NL10CD Series

Trench MOS Structure, 100V, 60A, LPDL, Highly Efficient SBD

Catalog

Trench MOS Structure, 100V, 60A, LPDL, Highly Efficient SBD

Part	Technology	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Diode Configuration	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Rohm Semiconductor YQ60NL10CDTL	Schottky	150 ¯C	60 A	100 V	200 mA 500 ns	Surface Mount	1 Pair Common Cathode	200 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	770 mV	TO-263L

Catalog

Trench MOS Structure, 100V, 60A, LPDL, Highly Efficient SBD

Description

The YQ60NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.