Discrete Semiconductor Products

ES 1V1

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Sanken Electric USA Inc.

DIODE GEN PURP 400V 700MA AXIAL

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Discrete Semiconductor Products

Active

Sanken Electric USA Inc.

DIODE GEN PURP 400V 700MA AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	ES 1V1

Current - Average Rectified (Io)	700 mA
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Axial
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	2.5 V

Part	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
Sanken Electric USA Inc. ES 1V1	Axial	Standard	400 V	700 mA	150 °C	-40 °C	Through Hole	1500 ns	Standard Recovery >500ns	200 mA	2.5 V	10 µA
Sanken Electric USA Inc. ES 1V0	Axial	Standard	400 V	700 mA	150 °C	-40 °C	Through Hole	1500 ns	Standard Recovery >500ns	200 mA	2.5 V	10 µA
Sanken Electric USA Inc. ES 1V	Axial	Standard	400 V	700 mA	150 °C	-40 °C	Through Hole	1500 ns	Standard Recovery >500ns	200 mA	2.5 V	10 µA
Sanken Electric USA Inc. ES 1FV0	Axial	Standard	1500 V	500 mA	150 °C	-40 °C	Through Hole	1500 ns	Standard Recovery >500ns	200 mA	2 V	10 µA
Sanken Electric USA Inc. ES 1FV	Axial	Standard	1500 V	500 mA	150 °C	-40 °C	Through Hole	1500 ns	Standard Recovery >500ns	200 mA	2 V	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 700mA Through Hole

Technical documentation and resources

No documents available