Discrete Semiconductor Products

ES 1FV1

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DIODE GEN PURP 1.5KV 500MA AXIAL

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Discrete Semiconductor Products

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DIODE GEN PURP 1.5KV 500MA AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	ES 1FV1

Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Axial
Reverse Recovery Time (trr)	1500 ns
Speed [Min]	200 mA, 500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1500 V
Voltage - Forward (Vf) (Max) @ If [Max]	2 V

Part	Reverse Recovery Time (trr)	Speed [Min]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Mounting Type	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
Sanken Electric USA Inc. ES 1V1	1500 ns	200 mA 500 ns	-40 °C	150 °C	Standard	Through Hole	700 mA	Axial	10 µA	400 V	2.5 V
Sanken Electric USA Inc. ES 1V0	1500 ns	200 mA 500 ns	-40 °C	150 °C	Standard	Through Hole	700 mA	Axial	10 µA	400 V	2.5 V
Sanken Electric USA Inc. ES 1V	1500 ns	200 mA 500 ns	-40 °C	150 °C	Standard	Through Hole	700 mA	Axial	10 µA	400 V	2.5 V
Sanken Electric USA Inc. ES 1FV0	1500 ns	200 mA 500 ns	-40 °C	150 °C	Standard	Through Hole	500 mA	Axial	10 µA	1500 V		2 V
Sanken Electric USA Inc. ES 1FV	1500 ns	200 mA 500 ns	-40 °C	150 °C	Standard	Through Hole	500 mA	Axial	10 µA	1500 V		2 V
Sanken Electric USA Inc. ES 1FV1	1500 ns	200 mA 500 ns	-40 °C	150 °C	Standard	Through Hole	500 mA	Axial	10 µA	1500 V		2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1500 V 500mA Through Hole

Technical documentation and resources