Discrete Semiconductor Products

IPP60R099P6XKSA1

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INFINEON

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

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Discrete Semiconductor Products

IPP60R099P6XKSA1

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INFINEON

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R099P6XKSA1

Current - Continuous Drain (Id) @ 25°C	37.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3330 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	278 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP60R099 Series

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPP60R099CPAAKSA1	N-Channel	10 V	Through Hole	255 W	PG-TO220-3	AEC-Q101	2800 pF	80 nC	3.5 V	TO-220-3	105 mOhm	MOSFET (Metal Oxide)	20 V	-40 °C	150 °C	600 V	Automotive	31 A
INFINEON IPP60R099P7XKSA1	N-Channel	10 V	Through Hole	117 W	PG-TO220-3				4 V	TO-220-3	99 mOhm	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	600 V		31 A	45 nC	1952 pF
INFINEON IPP60R099P6XKSA1	N-Channel	10 V	Through Hole		PG-TO220-3		3330 pF		4.5 V	TO-220-3	99 mOhm	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	600 V		37.9 A	70 nC		278 W
INFINEON IPP60R099CPXKSA1	N-Channel	10 V	Through Hole	255 W	PG-TO220-3		2800 pF	80 nC	3.5 V	TO-220-3		MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	650 V		31 A				99 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.98
	Tube	1	$ 4.27
		50	$ 2.42
		100	$ 2.26
		500	$ 2.21
Newark	Each	1	$ 4.14
		10	$ 3.93
		25	$ 3.81
		50	$ 3.77
		100	$ 3.71

Description

General part information

IPP60R099 Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Documents

Technical documentation and resources