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TO-220-3
Discrete Semiconductor Products

IPP60R099CPAAKSA1

Obsolete
INFINEON

MOSFET N-CH 600V 31A TO220-3

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TO-220-3
Discrete Semiconductor Products

IPP60R099CPAAKSA1

Obsolete
INFINEON

MOSFET N-CH 600V 31A TO220-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R099CPAAKSA1
Current - Continuous Drain (Id) @ 25°C31 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]80 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]2800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3
Power Dissipation (Max)255 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs105 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
33500$ 0.00

Description

General part information

IPP60R099 Series

N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources

No documents available