SI7450DP-T1-RE3

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N-CHANNEL 200-V (D-S) MOSFET

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Discrete Semiconductor Products

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N-CHANNEL 200-V (D-S) MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI7450DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	19.8 A, 3.2 A

Part	Package / Case	Vgs(th) (Max) @ Id	Technology	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI7450DP-T1-E3	PowerPAK® SO-8	4.5 V	MOSFET (Metal Oxide)	N-Channel	1.9 W	42 nC	PowerPAK® SO-8	6 V 10 V	80 mOhm	3.2 A	20 V	Surface Mount	-55 °C	150 °C	200 V
Vishay General Semiconductor - Diodes Division SI7450DP-T1-RE3										3.2 A 19.8 A

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General part information

3.2A (Ta), 19.8A (Tc)

Technical documentation and resources