Discrete Semiconductor Products

SI7450DP-T1-E3

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MOSFET N-CH 200V 3.2A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 200V 3.2A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7450DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Vgs(th) (Max) @ Id	Technology	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI7450DP-T1-E3	PowerPAK® SO-8	4.5 V	MOSFET (Metal Oxide)	N-Channel	1.9 W	42 nC	PowerPAK® SO-8	6 V 10 V	80 mOhm	3.2 A	20 V	Surface Mount	-55 °C	150 °C	200 V
Vishay General Semiconductor - Diodes Division SI7450DP-T1-RE3										3.2 A 19.8 A

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General part information

N-Channel 200 V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources