Discrete Semiconductor Products

SIZ256DT-T1-GE3

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MOSFET 2N-CH 70V 11.5A 8PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 70V 11.5A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ256DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11.5 A, 31.8 A
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	4.3 W, 33 W
Rds On (Max) @ Id, Vgs	17.6 mOhm
Supplier Device Package	8-PowerPair® (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type
Vishay General Semiconductor - Diodes Division SIZ256DT-T1-GE3	2 N-Channel (Dual)	11.5 A 31.8 A	-55 °C	150 °C	17.6 mOhm	8-PowerPair® (3.3x3.3)	27 nC	8-PowerWDFN	1.5 V	4.3 W 33 W	1060 pF	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 70V 11.5A (Ta), 31.8A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)

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