Technical Specifications
Parameters and characteristics for this part
| Specification | BSC025N08LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 55 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 156 W, 2.5 W |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm |
| Supplier Device Package | PG-TDSON-8-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC025 Series
OptiMOS™ 5 power MOSFETs in logic levelare highly suitable forcharging,adapterandtelecomapplications. The devices' low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Documents
Technical documentation and resources
