Discrete Semiconductor Products

STP10NM60ND

Obsolete

MOSFETS N-CH 600V 0.57 OHM 8A FDMESH II PWR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFETS N-CH 600V 0.57 OHM 8A FDMESH II PWR

Technical Specifications

Parameters and characteristics for this part

Specification	STP10NM60ND

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	577 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STP10NM60ND	10 V	8 A	150 °C	-55 °C	577 pF	MOSFET (Metal Oxide)	600 V	TO-220-3	TO-220	N-Channel	70 W	5 V	25 V	Through Hole	600 mOhm	20 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETS N-CH 600V 0.57 OHM 8A FDMESH II PWR

Technical documentation and resources

No documents available