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TO-220-3
Discrete Semiconductor Products

IPP120N04S401AKSA1

Obsolete
INFINEON

MOSFET N-CH 40V 120A TO220-3-1

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TO-220-3
Discrete Semiconductor Products

IPP120N04S401AKSA1

Obsolete
INFINEON

MOSFET N-CH 40V 120A TO220-3-1

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP120N04S401AKSA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]176 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]14000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)188 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPP120N Series

N-Channel 40 V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3-1

Documents

Technical documentation and resources