Discrete Semiconductor Products

IPP120N06NGAKSA1

Obsolete

MOSFET N-CH 60V 75A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 75A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP120N06NGAKSA1

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	158 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Qualification	FET Type	Grade	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPP120N06S4H1AKSA2	10 V	21900 pF	TO-220-3	20 V	250 W	Through Hole	AEC-Q101	N-Channel	Automotive	MOSFET (Metal Oxide)	2.4 mOhm	4 V	PG-TO220-3-1	270 nC	60 V	175 °C	-55 °C	120 A
INFINEON IPP120N06S402AKSA1	10 V	15750 pF	TO-220-3	20 V	188 W	Through Hole	AEC-Q101	N-Channel	Automotive	MOSFET (Metal Oxide)	2.8 mOhm	4 V	PG-TO220-3-1		60 V	175 °C	-55 °C	120 A	195 nC
INFINEON IPP120N06NGAKSA1	10 V		TO-220-3	20 V		Through Hole		N-Channel		MOSFET (Metal Oxide)	12 mOhm	4 V	PG-TO220-3-1		60 V	175 °C	-55 °C	75 A	62 nC	158 W	2100 pF
INFINEON IPP120N06S402AKSA2	10 V	15750 pF	TO-220-3	20 V	188 W	Through Hole	AEC-Q101	N-Channel	Automotive	MOSFET (Metal Oxide)	2.8 mOhm	4 V	PG-TO220-3-1		60 V	175 °C	-55 °C	120 A	195 nC
INFINEON IPP120N04S402AKSA1	10 V		TO-220-3	20 V		Through Hole	AEC-Q101	N-Channel	Automotive	MOSFET (Metal Oxide)	2.1 mOhm	4 V	PG-TO220-3-1		40 V	175 °C	-55 °C	120 A	134 nC	158 W	10740 pF
INFINEON IPP120N04S401AKSA1	10 V		TO-220-3	20 V	188 W	Through Hole	AEC-Q101	N-Channel	Automotive	MOSFET (Metal Oxide)	1.9 mOhm	4 V	PG-TO220-3-1	176 nC	40 V	175 °C	-55 °C	120 A			14000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 75A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources