Specification	SSM6G18NU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	112 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM6G18NU Series

Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)

Part	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Vgs (Max) [Max]
Toshiba Semiconductor and Storage SSM6G18NU,LF	150 °C	1 W	20 V	112 mOhm	270 pF	Surface Mount	MOSFET (Metal Oxide)	1 V	P-Channel	4.6 nC	6-µDFN (2x2)	2 A	1.5 V 4.5 V	Schottky Diode (Isolated)	8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3211	$ 0.48

General part information

Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)

Technical documentation and resources