SSM6G18NU Series
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
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Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
Bipolar Transistors, -20 V/-2 A P-ch MOS + SBD, SOT-1118(UDFN6)
| Part | Operating Temperature | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Technology | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 1 W | 20 V | 112 mOhm | 270 pF | Surface Mount | MOSFET (Metal Oxide) | 1 V | P-Channel | 4.6 nC | 6-µDFN (2x2) | 2 A | 1.5 V 4.5 V | Schottky Diode (Isolated) | 8 V |