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PBSS5260QAZ
Discrete Semiconductor Products

PBSS5260QAZ

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 1.7A 1000MW AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R

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Search across all available documentation for this part.

DocumentsPBSS5260QAZ Datasheet (PDF)DFN1010D-3; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147+6
PBSS5260QAZ
Discrete Semiconductor Products

PBSS5260QAZ

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 1.7A 1000MW AUTOMOTIVE AEC-Q101 3-PIN DFN-D EP T/R

Deep-Dive with AI

DocumentsPBSS5260QAZ Datasheet (PDF)DFN1010D-3; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147+6

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5260QAZ
Current - Collector (Ic) (Max) [Max]1.7 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 hFE
Frequency - Transition150 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XDFN Exposed Pad
Power - Max [Max]325 mW
QualificationAEC-Q100
Supplier Device PackageDFN1010D-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2687$ 0.61
MouserN/A 1$ 0.49
10$ 0.30
100$ 0.19
500$ 0.14
1000$ 0.12
2500$ 0.11
5000$ 0.10
10000$ 0.09
25000$ 0.08

Description

General part information

PBSS5260QA Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.