60 V, 1.7 A PNP low VCEsat (BISS) transistor
60 V, 1.7 A PNP low VCEsat (BISS) transistor
| Part | Package / Case | Supplier Device Package | Grade | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) [Max] | Mounting Type | Operating Temperature | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Qualification | Current - Collector Cutoff (Max) [Max] | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3-XDFN Exposed Pad | DFN1010D-3 | Automotive | 30 hFE | 1.7 A | Surface Mount | 150 °C | 150 MHz | 400 mV | 325 mW | AEC-Q100 | 100 nA | PNP | 60 V |