Specification	PMPB14XPX

Current - Continuous Drain (Id) @ 25°C	12.7 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2303 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	3.9 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMPB14XP Series

12 V, P-channel Trench MOSFET

Part	Technology	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PMPB14XPX	MOSFET (Metal Oxide)	950 mV	P-Channel	42 nC	1.8 V	4.5 V	DFN2020MD-6	12.7 A	2303 pF	3.9 W	8 V	6-UDFN Exposed Pad	150 °C	-55 °C	Surface Mount	19 mOhm	12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2529	$ 0.78

Description

General part information

PMPB14XP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.