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12 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Technology | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Vgs (Max) [Max] | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 950 mV | P-Channel | 42 nC | 1.8 V | 4.5 V | DFN2020MD-6 | 12.7 A | 2303 pF | 3.9 W | 8 V | 6-UDFN Exposed Pad | 150 °C | -55 °C | Surface Mount | 19 mOhm | 12 V |