Infineon Technologies AG-IR21271SPBF Gate and Power Drivers Driver 600V 1-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube

Integrated Circuits (ICs)

IR2102SPBF

NRND

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.21 A SOURCE AND 0.36 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS.

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Integrated Circuits (ICs)

IR2102SPBF

NRND

INFINEON

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2102SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	210 mA
Current - Peak Output (Source, Sink) [custom]	360 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ)	100 ns, 50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2102 Series

Part	Gate Type	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Channel Type	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Input Type	Rise / Fall Time (Typ)	Package / Case	Package / Case
INFINEON IR2102PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-PDIP	-40 °C	150 °C	0.8 V 3 V	Independent	8-DIP (0.300" 7.62mm)	20 V	10 VDC	Through Hole	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns
INFINEON IR2102PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-PDIP	-40 °C	150 °C	0.8 V 3 V	Independent	8-DIP (0.300" 7.62mm)	20 V	10 VDC	Through Hole	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns
INFINEON IR2102STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns	0.154 in	3.9 mm
INFINEON IR2102S	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns	0.154 in	3.9 mm
INFINEON IR2102STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge		50 ns 100 ns	0.154 in	3.9 mm
INFINEON IR2102	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-PDIP	-40 °C	150 °C	0.8 V 3 V	Independent	8-DIP (0.300" 7.62mm)	20 V	10 VDC	Through Hole	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns
INFINEON IR2102STRPBF
INFINEON IR2102SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns	0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.11
Digikey	N/A	456	$ 2.33
	Tube	1	$ 2.60
		10	$ 2.34
		95	$ 1.88
		285	$ 1.76
		570	$ 1.54
		1045	$ 1.28
		2565	$ 1.19
		5035	$ 1.15

Description

General part information

IR2102 Series

EiceDRIVER™ 600 V high and low-side gate driver ICwith typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in8 Lead PDIP.

Documents

Technical documentation and resources

No documents available