IR2102 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Gate Type	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Channel Type	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Input Type	Rise / Fall Time (Typ)	Package / Case	Package / Case
INFINEON IR2102PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-PDIP	-40 °C	150 °C	0.8 V 3 V	Independent	8-DIP (0.300" 7.62mm)	20 V	10 VDC	Through Hole	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns
INFINEON IR2102PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-PDIP	-40 °C	150 °C	0.8 V 3 V	Independent	8-DIP (0.300" 7.62mm)	20 V	10 VDC	Through Hole	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns
INFINEON IR2102STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns	0.154 in	3.9 mm
INFINEON IR2102S	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns	0.154 in	3.9 mm
INFINEON IR2102STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge		50 ns 100 ns	0.154 in	3.9 mm
INFINEON IR2102	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-PDIP	-40 °C	150 °C	0.8 V 3 V	Independent	8-DIP (0.300" 7.62mm)	20 V	10 VDC	Through Hole	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns
INFINEON IR2102STRPBF
INFINEON IR2102SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-SOIC	-40 °C	150 °C	0.8 V 3 V	Independent	8-SOIC	20 V	10 VDC	Surface Mount	2	210 mA	360 mA	Half-Bridge	Inverting	50 ns 100 ns	0.154 in	3.9 mm