Discrete Semiconductor Products

SIHW21N80AE-GE3

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MOSFET N-CH 800V 17.4A TO247AD

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Discrete Semiconductor Products

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MOSFET N-CH 800V 17.4A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SIHW21N80AE-GE3

Current - Continuous Drain (Id) @ 25°C	17.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	1388 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	TO-247AD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHW21N80AE-GE3	4 V	1388 pF	MOSFET (Metal Oxide)	72 nC	800 V	Through Hole	N-Channel	TO-247-3	32 W	10 V	-55 °C	150 °C	TO-247AD	30 V	17.4 A	235 mOhm

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General part information

N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AD

Technical documentation and resources