SIHW21 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 800V 17.4A TO247AD
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 V | 1388 pF | MOSFET (Metal Oxide) | 72 nC | 800 V | Through Hole | N-Channel | TO-247-3 | 32 W | 10 V | -55 °C | 150 °C | TO-247AD | 30 V | 17.4 A | 235 mOhm |