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TO-220AB Full Pack
Discrete Semiconductor Products

IRFIB7N50APBF

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TO-220AB Full Pack
Discrete Semiconductor Products

IRFIB7N50APBF

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFIB7N50APBF
Current - Continuous Drain (Id) @ 25°C6.6 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC
Input Capacitance (Ciss) (Max) @ Vds1423 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs520 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.12
50$ 1.68
100$ 1.44
500$ 1.41

Description

General part information

IRFIB7 Series

N-Channel 500 V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3

Documents

Technical documentation and resources