IRFIB7 Series

Catalog

MOSFET N-CH 500V 6.6A TO220-3

Part	FET Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRFIB7N50A	N-Channel	60 W	30 V	520 mOhm	10 V	TO-220-3	4 V	MOSFET (Metal Oxide)	1423 pF	Through Hole	-55 °C	150 °C	500 V	6.6 A	TO-220-3 Full Pack Isolated Tab	52 nC
Vishay General Semiconductor - Diodes Division IRFIB7N50APBF	N-Channel	60 W	30 V	520 mOhm	10 V	TO-220-3	4 V	MOSFET (Metal Oxide)	1423 pF	Through Hole	-55 °C	150 °C	500 V	6.6 A	TO-220-3 Full Pack Isolated Tab	52 nC
Vishay General Semiconductor - Diodes Division IRFIB7N50LPBF	N-Channel	46 W	30 V	380 mOhm	10 V	TO-220-3	5 V	MOSFET (Metal Oxide)	2220 pF	Through Hole	-55 °C	150 °C	500 V	6.8 A	TO-220-3 Full Pack Isolated Tab	92 nC