MSCSM70XM45CTYZBNMG

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700V, HPD, 3 PHASE BRIDGE + ACTUATION FULL-OPTIONS HYBRID POWER DRIVE MSIC™ MOSFET MODULE

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Discrete Semiconductor Products

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700V, HPD, 3 PHASE BRIDGE + ACTUATION FULL-OPTIONS HYBRID POWER DRIVE MSIC™ MOSFET MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM70XM45CTYZBNMG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	52 A, 110 A
Drain to Source Voltage (Vdss)	700 V
Gate Charge (Qg) (Max) @ Vgs	99 nC
Gate Charge (Qg) (Max) @ Vgs	215 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF, 2010 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Power - Max	292 W, 141 W
Rds On (Max) @ Id, Vgs	19 mOhm, 44 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.4 V, 2.7 V

700V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power - Max	Package / Case
Microchip Technology MSCSM70XM45CTYZBNMG	52 A 110 A	99 nC	215 nC	-55 °C	175 ░C	2.4 V 2.7 V	Chassis Mount	Silicon Carbide (SiC)	19 mOhm 44 mOhm	6 N-Channel (3-Phase Bridge)	2010 pF 4500 pF	700 V	141 W 292 W	Module

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

• Configuration: 3-phase bridge + Solenoid Switch + Soft Start Switch + Regen (Brake)

• SiC Power MOSFET

- Low RDS(on)

Technical documentation and resources