Specification	KSP06TA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

KSP06 Series

NPN Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Transistor Type	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSP06TA	80 V	TO-226-3 TO-92-3	Through Hole	NPN	625 mW	150 °C	100 nA	TO-92-3	50 hFE	100 MHz	500 mA	250 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources