Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCBO= KSP05: 60V
• Collector-Emitter Voltage : VCBO=KSP06: 80V
• Collector Dissipation: PC(max) = 625mW
• Complement to KSP55/56Amplifier Transistor
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NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Mounting Type | Transistor Type | Power - Max [Max] | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 80 V | TO-226-3 TO-92-3 | Through Hole | NPN | 625 mW | 150 °C | 100 nA | TO-92-3 | 50 hFE | 100 MHz | 500 mA | 250 mV |