Discrete Semiconductor Products
STL50DN6F7
ActiveSTMicroelectronics
DUAL N-CHANNEL 60 V, 9 MOHM TYP., 57 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Discrete Semiconductor Products
STL50DN6F7
ActiveSTMicroelectronics
DUAL N-CHANNEL 60 V, 9 MOHM TYP., 57 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL50DN6F7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 57 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 62.5 W |
| Rds On (Max) @ Id, Vgs | 11 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 5517 | $ 1.87 | |
Description
General part information
STL50DN6F7 Series
This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources