STE145N65M5
ActiveN-CHANNEL 650 V, 0.012 OHM TYP., 143 A MDMESH M5 POWER MOSFET IN AN ISOTOP PACKAGE
STE145N65M5
ActiveN-CHANNEL 650 V, 0.012 OHM TYP., 143 A MDMESH M5 POWER MOSFET IN AN ISOTOP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STE145N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 143 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 414 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 18500 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150 °C |
| Package / Case | ISOTOP |
| Power Dissipation (Max) | 679 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STE145N65M5 Series
This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.Very low RDS(on)Higher VDSSratingHigher dv/dt capabilityExcellent switching performance100% avalanche tested
Documents
Technical documentation and resources